位置：成果数据库 > 期刊 > 期刊详情页
Enhanced electron injection in organic light-emitting devices by using a composite electron injectio
  • ISSN号：0038-1098
  • 期刊名称：Solid State Communications
  • 时间：0
  • 页码：652-656
  • 语言：英文
  • 相关项目：有机电致发光硅基微显示器的基础研究
作者： Cao, Jin|Li, Jun|Zhang, Liang|Zhu, Wen-Qing|Khizar-ul-Haq|Jiang, Xue-Yin|Khan, M.A.|Zhang, Xiao-Wen|Zhang, Zhi-Lin|Ma, Jun-Wei|
同期刊论文项目
有机电致发光硅基微显示器的基础研究
期刊论文 40
同项目期刊论文
High-performance ZnO thin film transistors with sputtering SiO 2/Ta2O5/SiO2 multilayer gate dielectr
White OLEDs with efficient hole injection layer MoO3 and high-mobility electron transport layer
High performance ZnO-thin-film transistor with Ta2 O5 dielectrics fabricated at room temperature
Blue organic light-emitting diodes with low driving voltage and maximum enhanced power efficiency ba
Enhanced power efficiency for white OLED with MoO3 as hole injection layer and optimized charge bala
A blue organic light emitting diodes with graded junction
Multiplayer white organic light-emitting diodes with different order and thickness of emission layer
Electron mobility of 4,7-diphyenyl-1,10-phenanthroline estimated by using space-charge-limited curre
Organic light-emitting diodes by doping Liq into an electron transport layer
Organic light-emitting diodes based on new n-doped electron transport layer
Enhanced performances of ZnO-TFT by improving surface properties of channel layer
多层白色有机发光器件的结构和性能优化
Estimation of electron mobility of n-doped 4, 7-diphenyl-1, 10-phenanthroline using space-charge-limited currents
用反应溅射法沉积SiO_x绝缘层的InGaZnO-TFT的光照稳定性
Ta2O5绝缘层厚度对ZnO基薄膜晶体管器件性能的影响
具有复合空穴传输层的高效低压有机电致发光器件
Influence of layout parameters on snapback characteristic for a gate-grounded NMOS device in 0.13-μm silicide CMOS technology
基于最优扫描结构的分形IP核设计
基于遗传算法搜索高灰度级FPD扫描矩阵的研究
基于变频技术的数字调光控制器
平板显示器件的灰度显示优化结构
平板显示器件权值按位扫描的子空间划分策略
基于改进SURF算法的单目视觉里程计
平板显示系统分形扫描模型的IP核实现
图像采集系统的面阵CCD驱动电路设计