中文摘要：

采用复合靶磁控共溅射方法在p型（100）单晶硅衬底上制备了不同Ti含量的W-Ti薄膜,并与纯W和纯Ti薄膜作对比。采用XRD、SEM、AFM、显微硬度计和四探针电阻仪对薄膜的结构、成分及性能进行分析表征。结果表明,W-Ti薄膜呈细晶粒多晶结构,Ti含量较低时,W-Ti薄膜呈体心立方相结构,存在W基W（Ti）固溶体。Ti含量较高时,还出现hcp富Ti相。W-Ti薄膜的显微硬度随Ti含量的增加先增后减,而电阻率则随Ti含量的增加而增大。W-Ti薄膜显微硬度均高于纯Ti薄膜,电阻率则高于纯W而低于纯Ti薄膜。

英文摘要：

W-Ti thin films with different Ti contents were prepared by composite target magnetron co-sputtering technology on the p-type（ 100） single crystal silicon substrates,and compared with pure W and pure Ti films. The structure,composition and properties of thin films were characterized by XRD,SEM,AFM,microhardness tester and four-probe resistance meter. The results show that W-Ti thin films possess fine-grained polycrystalline structure. W-Ti thin films with lower Ti content are bcc structure along with the W-based W（ Ti） solid solution,while with higher Ti content W-Ti thin films have hcp Ti-rich phase. With the increase of Ti content,the microhardness of W-Ti thin film increases first and then decreases,and the resistivity increases. The microhardness of W-Ti thin film is higher than that of pure Ti thin film,whereas the resistivity of W-Ti thin film is higher than that of pure W thin film but lower than that of pure Ti thin film.