中文摘要：

用磁控溅射法制备铜钨合金薄膜，采用能谱仪、X射线衍射仪、透射和扫描电镜、电阻计和显微硬度仪等对合金薄膜的成分、结构和性能进行了表征，探讨了钨原子分数的影响。结果表明：含原子分数31．8％～54．8％钨的铜钨膜呈非晶态，表面较平整；含18％和609／6钨的膜为晶态，且出现固溶度扩展，分别存在fcc Cu（W）亚稳过饱和固溶体和bccW（Cu）固溶体，铜钨膜电阻率高于纯铜膜的，非晶铜钨膜电阻率较晶态膜高1．9倍以上；铜钨膜硬度与钨含量呈正相关，非晶及晶态铜钨膜硬度分别低于和略高于Voigt公式的计算值。

英文摘要：

The composition, structure and properties of Cu-W thin films fabricated by magnetron sputtering were characterized by EDX, XRD, TEM, SEM, resistance meter and microhardness instrument. The effect of W atom fraction was discussed. The results show that Cu-W thin films with 31.8 ate--54.8 at% W were amorphous and had smooth surface. Thin films with 18 at~ W and 60 at~ W were crystalline state with solid solubility expansion in the fcc Cu（W） metastable supersaturated solid solution and bcc W（Cu） solid solution, respectively. The electrical resistivity of Cu-W thin films was higher than that of pure Cu films, and the resistivity of amorphous Cu-W thin films was over 1.9 times higher than that of crystalline films. The microhardness of Cu-W thin films was correlated positively with W content, the hardness of amorphous and crystalline Cu-W thin films was lower and slightly higher than the calculated values by Voigt fomula, respectively.