中文摘要：

用射频磁控溅射法在蓝宝石（0001）衬底上制备出锑掺杂的氧化锡（SnO2：sb）薄膜，对制备薄膜的结构和发光性质进行了研究。制备样品为多晶薄膜，具有纯SnO2的四方金红石结构，室温条件下对样品进行光致发光测量，在334nm附近观测到紫外发射峰，并对SnO2：Sb的光致发光机制进行了研究。

英文摘要：

The SnO2：Sb films have been prepared on sapphire （0001） substrates by radio frequency magnetron sputtering method. The structural and photol （PL） properties of the films were investigated. The prepared samples are polycrystalline films with ruffle structure of pure SnO2. The photoluminescence of the samples was measured at room temperature. An ultraviolet luminescence peak near 334 nm was observed for the first time and the corresponding PL mechanism was investigated.