A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure
- ISSN号:1674-4926
- 期刊名称:《半导体学报:英文版》
- 时间:0
- 分类:TN86[电子电信—信息与通信工程] TE319[石油与天然气工程—油气田开发工程]
- 作者机构:[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
- 相关基金:Project supported by the National Natural Science Foundation of China (No. 50777005) and the Young Foundation of University of Electronic Science and Technology of China (No. JX0832).
关键词:
数值模拟方法, 电路结构, 准三维, 三维仿真技术, 高压, 器件结构, 半导体表面, CPU时间, quasi-3D, 3D, device simulation, high-voltage level-shifting
中文摘要:
Corresponding author. Email:jzhliu@uestc.edu.cn