中文摘要：

采用氩离子刻蚀XPS（X光激发电子能谱）分析对Si3N4／SiO2／Si双界面系统进行了电离辐照剖面分析。实验结果表明：电离辐照能将SiO2和Si构成的界面区中心向Si3N4／SiO2界面方向推移，同时SiO2／Si界面区亦被电离辐照展宽。在同样偏置电场中辐照，随着辐照剂量的增加电离辐照相当程度地减少位于SiO2／Si界面区Si3N4态（结合能B．E．101．8eV）Si的浓度。同时辐照中所施偏置电场对SiO2／Si界面区Si3N4态键断开有显著作用。文中就实验现象的机制进行了初步探讨。

英文摘要：

The interfacial structures of double interface system of Si3N4/SiO2/Si were examined using XPS （X-ray Photoelectron Spectroscopy）before and after ^60Co irradiation. The experimental results demonstrate that after the Si3N4/SiO2/Si samples were irradiated by ^60Co γ-ray, the interface between SiO2 and Si extended towards the interface of Si3N4/SiO2 and the center of the former interface moved towards the interface of the latter. The concentration of silicon in the Si3N4 state（B. E. 101.8 eV）was dropped with the increasing of dosage at -1 MV/cm bias field within the SiO2-Si interface,remarkably. Meanwhile the effects of bias field on XPS spectra at the interface SiO2-Si were observable. Finally,some viewpoints to explain the experimental results have been suggested.