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The light emitting properties of Ge nanocrystals grown by pulsed laser deposition
  • ISSN号：0957-4484
  • 期刊名称：Nanotechnology
  • 时间：0
  • 作者或编辑：3448
  • 第一作者所属机构：绍兴文理学院
  • 页码：Vol. 16, 835-835
  • 语言：英文
  • 相关项目：CdS三维光子晶体的制备及其光子带隙的研究
作者： 马锡英|ZhiJun Yan|Baohe Yuan|Baojun Li|
同期刊论文项目
CdS三维光子晶体的制备及其光子带隙的研究
期刊论文 23 著作 1
同项目期刊论文
Theoretical analysis of two-dimensional photonic crystal spot-size converter in Si for 1.55 mm oper
The Rapid Preparation of large scale CdS opal photonic crystals
Investigation of the size effect on optical properties of polycrystalline Ge deposition
Electric Properties of Ge Quantum Dot Embedded in Si Matrix
The Detection Application of CdS Quantum Dots in Labeling DNA Molecules
Investigation the size effect on optical properties of polycrystalline Ge deposition by pulse laser
The photodetector of Ge nanocrystals/Si for 1.55 um operation deposited by pulsed laser deposition
纳米ＣｄＳ 磺化聚苯胺(ＳＰＡｎ)多层复合膜的光学特性研究
Optical characteristics of laser-crystallized Si1-xGex nanocrystals
Investigation of Quantum Size Effect of Laser Induced CdS Quantum Dots in Sulfonic Group Polyaniline
Study of the pulsed laser vapor doping of the Si (100) with KrF excimer laser and BCl3 gas
Investigation of the quantum confinement effects in Ge dots by electrical Measurements
Thermal coefficients of the electrical resistivity of Ge nanocrystals on Si for infrared detectors
一维光子晶体的光子带隙研究
碳纳米团簇向碳纳米纤维相转变机理研究
Infrared Absorption Characteristics of Polycrystalline Iridium-Silicides Thin Films
Infrared Detection Characteristics of IrSi Nanocrystals
Fabrication and annealing analysis of three-dimensional photonic crystals
Three-dimensional photonic crystals with tunable photonic bandgap
电离辐射对Si3N4／SiO2／Si双界面系统的作用
电离辐射下双界面Si3N4/SiO2／Si的等离激元
RSA公钥密码体制中安全素数寻找方法改进