中文摘要：

以氧化二乙酰丙酮合钒（C10H14O5V）为前驱体,乙醇钽[Ta（OC2H5）5]为掺杂剂,用溶胶-凝胶方法在Si（100）和SiO2/Si衬底上制备了V1-xTaxO2（x=0-0.1）多晶薄膜。XRD谱图显示薄膜呈（011）面取向生长。随着Ta掺杂量的增大,d（011）基本呈线性增大表明Ta替代了V在晶格中的位置,实现了替位掺杂。每掺杂1%原子比的Ta,相变温度降低7.8℃,相变热滞减小1℃。SiO2/Si衬底上5%原子比掺杂薄膜的相变温度为29.5℃,室温（300 K）电阻-温度系数（TCR）为-8.44%/K。两种衬底上掺杂V0.9Ta0.1O2薄膜的升温和降温电阻-温度曲线基本重合。实验结果显示,Ta是降低VO2薄膜的相变温度和消除相变热滞的有效掺杂剂。

英文摘要：

V1-xTaxO2（x=0-0.1）polycrystalline thin films were deposited on Si（100）and SiO2/Si substrates by Sol-Gel method used VO（acac）2 as a precursor and tantalum pentaethoxide as a dopant.The XRD patterns showed the high（011） orientation of films.A linear increase in the value of d（011） with increasing doped tantalum content is also obtained,which means that the Ta5＋ substitutes the position of V4＋ in the sublattice.The transition temperature and hysteresis width are lowered by 7.8℃ and 1℃ respectively,per 1at.% Ta doped.For V0.95Ta0.05O2 film on SiO2/Si substrate,the phase transition temperature is 29.5℃,and the temperature coefficient of resistance（TCR） is-8.44%/K at 300K.The heating and cooling R-T curve of V0.9Ta0.1O2 films almost overlap.These properties indicate that Tantalum is an efficient dopant for VO2 film to decrease the transition temperature and eliminate hysteresis.