中文摘要：

将V2O5粉体与WO3粉体均匀混合并压制成靶，用离子束增强沉积加后退火技术在SiO2衬底上制备掺钨VO2多晶薄膜．X射线衍射表明，薄膜取向单一，为VO2结构的[002]相，晶格参数d比VO2粉晶增大约0．34％；薄膜从半导体相向金属相转变的相变温度约28℃；室温（300K）时的电阻．温度系数（TCR）可大于10％／K，是目前红外热成像薄膜TCR的四倍．W离子的半径大于V离子的半径，W的掺入在薄膜中引入了张应力，使薄膜相变温度降低到室温附近，是IBEDV0.97W0.03O2薄膜的室温电阻温度系数提高的原因．

英文摘要：

The W doped vanadium oxide film was deposited on the SiO2 substrate by modified ion beam enhanced deposition （IBED） method. The V2O5 and WO3 mixed powders, atom ratio of W/V being 3/97, were pressed as the sputtering target. After annealed in Ar or N2 the polycrystalline IBED VO2 film doped with tungsten was obtained. The annealed IBED V0.97 W0.03 O2 film was orientated only to [ 002 ] of VO2 structure, and the latice parameter d was larger than that of VO2 crystal powder measured by X-ray diffraction. The results of resistance- temperature test showed that the phase transition temperature was decreased from 68℃ to 28℃. The thermal coefficient of resistance （TCR） was high up to 10 %/K at 300K. With the ionic radius of tungsten larger than the radius of vanadium, W^6 ＋ ion doping would induce a tension stress into the film. As a result, the transition temperature of the W-doped VO2 films was decreased to the room temperature, and the TCR was increased greatly.