中文摘要：

主要利用Mason等效电路模型对加入介质声损耗的薄膜体声波谐振器输入阻抗公式进行了推导，并利用该结果对薄膜体声波谐振器的谐振特性进行了模拟分析，分别就不同压电层材料和厚度以及不同电极材料和厚度对薄膜体声波谐振器谐振特性的影响进行了详细分析．结果表明，薄膜体声波谐振器谐振频率主要由压电材料和厚度决定但电极的影响也是很大的．在制作高频FBAR器件（5GHz以上）时，采用氮化铝作压电材料比用氧化锌作压电材料更合适．

英文摘要：

The input impedance formula of film bulk acoustic resonators （FBARs） with acoustic attenuation is derived from the Mason equivalent circuit model. With this formula, the resonant properties of FBARs are simulated and analyzed. The influence of different materials and thickness of piezoelectric layer and electrodes on the resonant properties is investigated. The results indicate that the resonant frequency is mainly determined by the piezoelectric material and thickness, but electrodes also play important roles. For FBARs over 5GHz, it is suggested to use A1N instead of ZnO for piezoelectric layer.