中文摘要：

介绍了一种薄膜体声波谐振器和它的制备流程。该谐振器采用氧化锌压电薄膜作为压电材料，通过从硅片背部体刻蚀硅衬底的方法得到谐振器的支持层。为了避免残余应力引起的支持层起皱现象，采用氮化硅／二氧化硅／氮化硅复合膜作为支持层。采用直流磁控溅射的方法制备氧化锌压电薄膜，X射线衍射结果显示，氧化锌压电薄膜C轴择优取向明显，衍射峰半高宽为0．2273°，显示出较好的结晶质量；扫描电镜观察到氧化锌垂直于薄膜表面的柱形晶粒结构，薄膜表面平整、致密。采用HP8753D射频网络分析仪对该薄膜体声波谐振器样品进行了测试，结果表明，谐振器具有明显的厚度伸缩振动模式，其基频在750MHz左右，二次谐频在1．5GHz左右。进一步提高氧化锌压电薄膜的性能，该谐振器可用于射频振荡源和射频前端滤波器中。

英文摘要：

A film bulk acoustic resonator （FBAR） and its fabrication process were presented. Sputtered ZnO thin film was used as the resonator＇s piezoelectric layer, and its supporting membrane was formed by bulk-etching the silicon substrate from the backside. In order to avoid the wrinkling of the released membrane caused by the internal residual stress, SiNx/SiO2/SiNx multi-layer support structure was introduced. The piezoelectric ZnO thin film was deposited by DC reactive magnetron sputtering. The X-ray diffraction measurement shows that the sputtered film is highly c-axis-oriented with a full width at half maximum （FWHM） 0.227 3° .Its scanning electron microscopy （SEM） image shows the columnar structure is perpendicular to the smooth and dense film surface. The fabricated FBAR samples were tested using a HP 8753D network analyzer. The measurement results show that the resonator has strong thickness-extension （TE） vibration modes with fundamental resonance frequency at about 750 MHz and second harmonic resonance frequency at about 1.5 GHz. With the quality of ZnO piezoelectric film improved, the resonator could be used in RF oscillators and RF front - end filters.