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Influence of Si doping on the structural and optical properties of InGaN epilayers
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：2013.10.10
  • 页码：106803-
  • 相关项目：光泵浦有机半导体连续激光器的微型化制作研究
作者： He Miao|Ma Zi-Guang|Su Shi-Chen|Zhang Li|Chen Hong|Jia Hai-Qiang|Jiang Yang|Qian Wei-Ning|Wang Geng|
同期刊论文项目
光泵浦有机半导体连续激光器的微型化制作研究
期刊论文 21
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Influence of Si doping on the structural and optical properties of InGaN epilayers
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406