东篱科研大数据发现系统（DRDS）

位置：成果数据库 > 期刊 > 期刊详情页

Influence of Si doping on the structural and optical properties of InGaN epilayers

ISSN号：1674-1056
期刊名称：《中国物理B：英文版》
时间：0
分类：TN248[电子电信—物理电子学] TN304.23[电子电信—物理电子学]
作者机构：[1]Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China, [2]Beijing National Laboratory of Condensed Matter, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
相关基金：Project supported by the National High Technology Research and Development Program of China （Grant Nos. 2011AA03A112, 2011AA03A106, and 2013AA03A101）, the National Natural Science Foundation of China （Grant Nos. 11204360, 61210014, and 61078046）, the Science ＆ Technology Inno- vation Program of Department of Education of Guangdong Province, China （Grant No. 2012CXZD0017）, the Industry-Academia Research Union Special Fund of Guangdong Province, China （Grant No. 2012B091000169）, and the Science ＆ Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund, China （Grant No. 2012B090600038）.

作者：卢平元[1,2], 马紫光[2], 宿世臣[1], 张力[1], 陈弘[2], 贾海强[2], 江洋[2], 钱卫宁[1], 王耿[1], 卢太平[2], 何苗[1]

关键词：氮化铟镓, 外延层, 光学性能, 结构, 硅掺杂, INGAN, 原子力显微镜, 扫描电子显微镜, Si doping, InGaN, V-shaped defect

中文摘要：

Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction(HRXRD),photolumimescence(PL),scanning electron microscope(SEM),and atomic force microscopy(AFM).It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing the formation of V-defects,which act as nonradiative recombination centers in the InGaN,and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.

英文摘要：

Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction （HRXRD）, photolumimescence （PL）, scanning electron microscope （SEM）, and atomic force microscopy （AFM）. It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing tile formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.

同期刊论文项目