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Low Interface Trap Densities and Enhanced Performance of AlGaN/GaNMOS High-Electron Mobility Transis
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2015.12
  • 页码：1284-1286
  • 相关项目：半导体高速射频器件和模拟器件
作者： Wu, Wen-Wei|Xiao, Xiangheng|Jiang, Changzhong|Liao, Lei|
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半导体高速射频器件和模拟器件
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