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Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated
  • ISSN号：1613-6810
  • 期刊名称：Small
  • 时间：2015.11.25
  • 页码：5932-5938
  • 相关项目：半导体高速射频器件和模拟器件
作者： Jiang, Changzhong|Hu, Weida|Wang, Jianlu|Li, Jinchai|
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半导体高速射频器件和模拟器件
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