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Investigation of interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequenc
  • 期刊名称：Chinese Physics B
  • 时间：2014.6.1
  • 页码：05730-
  • 相关项目：基于GaN纳米线铁电场效应晶体管及相关电性能
作者： Y.Q.Chen|
同期刊论文项目
基于GaN纳米线铁电场效应晶体管及相关电性能
期刊论文 14 会议论文 4
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