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Reliability Investigations of AlGaN/GaN HEMTs Based on on-state electroluminescence Characterization
  • ISSN号：1530-4388
  • 期刊名称：IEEE Transactions on Device and Materials Reliabil
  • 时间：2014.10.2
  • 页码：69-74
  • 相关项目：基于GaN纳米线铁电场效应晶体管及相关电性能
作者： Y. Q. Chen|P. Lai|Y. Huang|Y. F. En|
同期刊论文项目
基于GaN纳米线铁电场效应晶体管及相关电性能
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