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Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors
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  • 相关项目：纳米CMOS器件源漏新型低接触电阻材料和工艺研究
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纳米CMOS器件源漏新型低接触电阻材料和工艺研究
期刊论文 17 会议论文 2
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Characterization of Ni/Ho and Ni/Er fully silicided metal gates on SiO2 gate dielectric
Oxidation suppression in ytterbium silicidation by Ti/TiN bi-capping layer
非晶化注入技术在NiSi SALICIDE工艺中的应用
Effect of erbium interlayer on nickel silicide formation on Si(1 0 0)
Improvement of Er-silicide formation on Si(100) by W capping
Schottky contact barrier height extraction by admittance measurement
Silicidation of Ni(Yb) Film on Si(001)
Study of Ni/Si(1 0 0) solid-state reaction with Al addition
Study of Ni/Si(100) solid-state reaction with Y addition
Pre-doping effects on Ni fully silicided metal gate on SiO2 dielectric
Erbium silicide formation and its contact properties on Si（100）
Growth of Pinhole Free Ytterbium Silicide Film by Solid-State Reaction on Si(001) with a Thin Amorph
Effect of Pt Addition on the Stress of NiSi Film Formed on Si (100)
Yttrium silicide formation and its contact properties on Si(100)
Linear growth of Ni2Si thin film on n+/p junction at low temperature
掺Pt对Si（100）上形成的NiSi薄膜应力的影响