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Yttrium silicide formation and its contact properties on Si(100)
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  • 相关项目：纳米CMOS器件源漏新型低接触电阻材料和工艺研究
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纳米CMOS器件源漏新型低接触电阻材料和工艺研究
期刊论文 17 会议论文 2
同项目期刊论文
Characterization of Ni/Ho and Ni/Er fully silicided metal gates on SiO2 gate dielectric
Oxidation suppression in ytterbium silicidation by Ti/TiN bi-capping layer
非晶化注入技术在NiSi SALICIDE工艺中的应用
Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors
Effect of erbium interlayer on nickel silicide formation on Si(1 0 0)
Improvement of Er-silicide formation on Si(100) by W capping
Schottky contact barrier height extraction by admittance measurement
Silicidation of Ni(Yb) Film on Si(001)
Study of Ni/Si(1 0 0) solid-state reaction with Al addition
Study of Ni/Si(100) solid-state reaction with Y addition
Pre-doping effects on Ni fully silicided metal gate on SiO2 dielectric
Erbium silicide formation and its contact properties on Si（100）
Growth of Pinhole Free Ytterbium Silicide Film by Solid-State Reaction on Si(001) with a Thin Amorph
Effect of Pt Addition on the Stress of NiSi Film Formed on Si (100)
Linear growth of Ni2Si thin film on n+/p junction at low temperature
掺Pt对Si（100）上形成的NiSi薄膜应力的影响