中文摘要：

应用半经典的蒙特卡罗方法，模拟计算了处于不同缺陷条件下的砷化镓在超快激光激发下的载流子输运行为及其相应的太赫兹波发射性能。计算结果表明，缺陷的类型和浓度都会对太赫兹波的脉宽和峰高产生显著的影响。分别采用500keV和1．5MeV的氮离子在不同剂量下辐照了半绝缘的砷化镓和掺铁磷化铟样品，并将辐照样品制备成太赫兹波发射天线。通过对辐照样品的太赫兹波发射能力进行测量，发现不同辐照条件下制备的太赫兹发射天线其太赫兹波的脉宽基本一致，只有峰高随辐照产生的缺陷浓度增大呈现先增大后减小的变化。结合理论计算和实验测量结果，分析讨论了光电导材料太赫兹波发射的缺陷机制。

英文摘要：

Background： As the core component of terahertz system, terahertz source determines the performance of the whole system. The THz wave emission efficiency depends decisively on the THz emitting materials which are usually made of low-temperature-grown gallium arsenide. It is found that through ion irradiation better THz wave emission material can be prepared, which overcomes the poor reproducibility of high quality material prepared by the traditional method. Purpose： In order to find out the best irradiation condition for producing the required photoconductive material, we try to clarify the mechanism of the THz wave emission induced by ion implantation. Methods： Applying Monte Carlo method, we simulated the terahertz emission under different defect conditions, and tested the emission efficiency of GaAs and InP（Fe） irradiated by N ions with the energy of 500 keV and 1.5 MeV, respectively. Results： MC simulation study shows that both capture cross-section and trap density can cause changes in terahertz pulse width and peak intensity. From the experiments conducted on ion irradiated semiconductors we found only the peak intensity changes with the irradiation fluence. Conclusion： It is proposed that intrinsic defects introduced during growth of crystals are the key defects that contribute mainly to the terahertz wave emission behavior, and defects introduced by ion irradiation may only modify the transport property of carriers through scattering in semiconductor, by which it changes the terahertz wave emission performance.