中文摘要：

对用电化学方法制备Si大孔阵列管坑工艺进行了初步探索。通过对Si在KOH溶液中各向异性湿法蚀刻和在HF酸溶液中的电化学蚀刻过程中各种参数的摸索，确定在室温下制备大孔阵列的最佳配比浓度，蚀刻出符合要求的管坑阵列，为进一步制备结构化闪烁屏奠定了实验基础。

英文摘要：

The 3-D structures in silicon are increasingly coming to use in many fields. For example, the high resolution X-ray digital imaging detector, can be made by coupling CCD and the scintillating screen which is made by the array trenches filled with CsI（T1）. In the present work, we explored the technology of etching micro-array on the n-type silicon with high resistance. By studying the relative parameters of anisotropic etching of KOH and electro-chemical etching of HF, the optimized concentration of HF was determined and the micro-pore array trenches with 200μm in depth were realized. The results establish an experimental base for further fabrication of the scintillating screen.