中文摘要：

本文采用直流磁控溅射方法，在He／Ar混合气氛中，通过分别改变He／Ar流量比和沉积偏压制备不同He含量的钛膜．利用XRD（X—raydiffraction）对含He钛膜的微观结构和晶粒尺寸进行了研究．结果表明，在其它实验参数不变的情况下，当He／Ar流量比从1．0增加到25时，钛膜的平均晶粒尺寸从19．02nm减小到8．63nm．随着膜中He含量的增加，衍射峰宽化，晶粒细化，He的掺入有抑制纳米晶粒长大的趋势．而当沉积偏压从24V增加到151V时，其平均晶粒尺寸基本不变．He引入引起了（002）晶面衍射峰向小角度移动，晶格参数c增加，而a不变．

英文摘要：

Helium-charged titanium films was prepared at different flux ratio of He/Ar, different substrate bias voltage by magnetron sputtering in a gas mixture of helium and argon. The microstructure and average grain size of the nanocrystalline titanium films was investigated by XRD（X- ray diffraction）. The results indicated that under the same deposition parameters except the flux ratio of He/Ar ,with increased from 1.0 to 25, the grain size decreased from 19.02 nm to 8.63 nm. When increasing helium content in the film, the diffraction peaks broadened and grain sizes decreased. These results further indicated that the incorporation of helium has a tendency to suppress the gain growth of film. When suhstrate bias voltage increased from 24 V to 151 V,the grain size nearly invariability. The Bragg peak of （002） crystal plane in the film had a slight shift to of the left comparing with that of the pure Ti film. This indicated that the lattice parameter c increased but the lattice parameter a remained the same.