中文摘要：

采用直流非平衡磁控溅射射频等离子体增强电高法在Si衬底上沉积了Cu膜，用扫描电镜（SEM）研究了沉积Cu膜的表面形貌并测得薄膜的厚度，用X射线衍射（XRD）研究了沉积Cu膜的结构，用电子能谱等对Cu膜进行了成分分析．实验结果表明，在该条件下沉积的Cu膜致密，晶粒尺度在100～1000nm，膜基界面比较紧密，没有明显的空洞，并且Cu膜呈（111）织构．通过实验，找到沉积Cu膜的最佳实验参数，并希望这一工艺能应用在集成电路中．

英文摘要：

The Cu film deposited on Si substrates by the nonequilibrium magnetron sputtering and enhanced by RF plasma is investigated. The film is analyzed by means of Scan Electron Microsope （SEM）, X-ray Diffraction（XRD） and Electron Spectroscopy （ES）. The results show that the film is dense, the scale of the crystal grain is about 100-1 000 nm, the interface between the film and the substrate is dense and without hole. The film is with the structure of Cu（111）. From the experiments, the best experiment parameters for deposition Cu film can be found. This technique can be applied to integrated circuit.