欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
calculation of discrepancies in measures valence band offsets of heterojunctions with dfferent cryst
ISSN号:0022-8979
期刊名称:Journal of Applied Physics
时间:2012.12.12
页码:-
相关项目:非极性ZnO材料的p型掺杂研究
作者:
Huijie Li, Xianglin Liu, Jianxia Wang, Dongdong Ji|
同期刊论文项目
非极性ZnO材料的p型掺杂研究
期刊论文 11
专利 3
同项目期刊论文
Energy band alignment of MgO (111)/ZnO (0002) heterojunction determined by X-ray photoelectron spect
Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic che
Mobility limited by cluster scattering in ternary alloy quantum wires
Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
The Growth of Semi-Polar ZnO (10(1)over-bar1) on Si (111) Substrates Using a Methanol Oxidant by Met
Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN h
Design of a three-layer hot-wall horizontal flow MOCVD reactor
Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer