中文摘要：

利用微波吸收介电谱检测技术，对均匀掺杂[Ru（CN）6]4-的立方体Agcl微晶中自由和浅束缚光电子时间分辨谱进行了检测。实验结果表明，样品曝光后，光生电子数量达到极大值所需时间随掺杂浓度增加逐渐变长；且随掺杂浓度的增加，自由光电子衰减时间逐渐从未掺杂时的157ns延长至1071ns。在分析光电子衰减曲线时发现，掺杂影响光电子的前期和后期衰减过程，主要是后期过程；且随掺杂浓度增加，光电子的前期和后期衰减都逐渐变慢。通过对比掺杂[Fe（CN）6]4-的研究结果发现，掺杂[Ru（CN）6]4-引入了浅电子陷阱（sEn），其深度较[Fe（cN）6]4-的浅。

英文摘要：

By microwave absorption and dielectric spectrum measurement technique, the decay spectra of the free and shallow-trapped photoelectrons in cubic AgCl microcrystals doped with [Ru（CN）6]4- are measured. The results show that the time when the amount of free photoelectrons arrives to its maximum becomes longer with doping concentration increasing after exposure, and the free photoelectron decay time increases from 157 ns to 1071 ns. By analyzing the photoelectron decay curve,it is also obtained that the doping has effect on the earlier and latter decay sections, mainly the latter section, and the two decay sections become slower with the doping concentration increasing Compared with the doping of [Ru（CN）6]4-,it is shown that the doping center of [Ru（CN）6]4- introduces shallow electron traps,which is lower than that of [Ru（CN）6]4-.