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脉冲偏压对矩形平面大弧源离子镀TiN膜层性能的影响
  • 期刊名称:材料研究学报, 2008,22(4):399-404
  • 时间:0
  • 分类:TB321[一般工业技术—材料科学与工程]
  • 作者机构:[1]哈尔滨工业大学材料学院现代焊接生产技术国家重点实验室,哈尔滨150001, [2]沈阳北宇真空设备厂,沈阳110045, [3]哈尔滨第一工具有限公司,哈尔滨150020
  • 相关基金:国家自然科学基金10575025资助项目.
  • 相关项目:一种细长管内表面离子注入新技术及其机理研究- - - - 射频放电/高压脉冲直接耦合的内源/正偏压等离子体离子注入
中文摘要:

采用矩形平面大弧源离子镀技术在201奥氏体不锈钢基体表面制备TiN硬质薄膜,研究了脉冲偏压对TiN膜层的表面形貌、相结构、硬度和耐磨性能的影响.结果表明,随着脉冲偏压的增大,薄膜中大颗粒的数目先增加后减少,这是大颗粒受到离子拖曳力和电场力双重作用的结果.存在一个最佳的脉冲偏压,使得制备出的TiN膜层具有较高的I(111)/I(200)比例和较高的耐磨性.脉冲偏压为-300 V时制备的TiN膜层具有最好的综合性能.

英文摘要:

TiN films were fabricated on 201 austenitic stainless steel by vacuum arc ion plating with large rectangular planar target. The effect of pulse bias on the surface morphology, micro-structure, surface hardness and wear resistance, etc has been investigated. The number of macro particles demonstrates an increase with sample bias, followed by a decrease with bias. This may be attributed to the competition between the force resulted from ion drag and force induced by electrical filed. The results also show that there exists an optimal bias to achieve a larger ration of I(111) to I(200) and higher wear-resistance. The 300 V bias leads to better surface properties.

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