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有机片式固体钽电解电容器制备工艺研究
  • 期刊名称:材料导报, 2009, 23(6): 85~88
  • 时间:0
  • 分类:TM535.1[电气工程—电器] TQ637[化学工程—精细化工]
  • 作者机构:[1]成都电子科技大学光电信息学院,成都610054
  • 相关基金:国家自然科学基金(60771044)
  • 相关项目:基于SA纳米气敏薄膜的图像识别系统及其FPGA实现
中文摘要:

研究了导电聚合物PEDT作为阴极材料的有机片式固体钽电解电容器的制备工艺,通过调整隔离材料、掺杂剂等参数有效改善了有机片式固体钽电容器的性能。重点研究了阻隔剂、掺杂剂含量等参数对有机片式固体钽电容器电容、等效串联电阻、漏电流等性能的影响。结果表明,当隔离材料体积分数为0.5%~125%时,薄膜具有较好的耐压性能,电容器的漏电流较小(〈5μA);当掺杂剂质量分数为1.5%~2%时,掺杂剂可以有效地进入PEDT主链进行掺杂,PEDT薄膜的电导率较高,从而使电容器获得较低的等效串联电阻。

英文摘要:

The performance of solid-electrolyte tantalum capacitor employing PEDT as cathode material is improved by studying the production process and adjusting the parameters of barrier material and doping agent. The effects of barrier material and doping agent are also studied, and the results shows that the desirable performance of B case tantalum capacitor samples is achieved when the concentration of barrier material is 1.5vol% and the concentra- tion of doping agent is 1.5wt% ; the desirable performance of H case tantalum capacitor samples is achieved when the concentration of barrier material is 0. 5vol% and the concentration of doping agent is 2wt%.

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