中文摘要：

利用基于Monte Carlo方法模拟实际物理过程的CASINO程序,研究Ga N基LED受不同能量电子辐照时电子运动和能量沉积情况等变化,得出不同能量入射电子的能量沉积情况差别较大,且入射能量较低的电子束对Ga N材料的影响较大,这与实验所得结果相符。同时还研究了低能电子束辐照时碰撞能量沉积,将介质层化合物等效为带有一定原子序数的原子,利用解析方法模拟辐照Ga N时的能量沉积。结果表明,每种化合物的传输效率都与传输深度成反比,也与化合物等价原子序数成反比;等价原子序数越小的材料,电离能量损失的峰值越小;利用有效层方法得到电子在材料内部的能量沉积规律,即由于介质之间的差异使不同介质层之间存在明显的能量传输界线。

英文摘要：

The changes of electron movement and energy deposition in Ga N-based LED irradiated by different energies of electrons were studied by using the CASION program based on Monte Carlo simulation method to simulate the actual physical process. The results show that there is a greater difference in the energy deposition between different energies of incident electrons and a greater impact on the Ga N material irradiated by the lower incident energy of the electron beam. These results are consistent with the experimental results. At the same time,the collision energy deposition irradiated by the low electron beam was also studied. Compounds in media layers were equivalent to the atoms with certain atomic number. Then,the energy deposition was simulated by the analytical method when Ga N was irradiated.The results show that the transmission efficiency of each compound is inversely proportional to the transmission depth,also inversely with the equivalent atomic number of compounds. The smaller the equivalent ato-mic number of the material is,the smaller the peak value of the ionization energy deposition is.Using effective layer approach,the law of the electron energy damage within the material was obtained,the energy transmission line existed between different layers due to the differences between the media.