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中文摘要：
在铁磁层（FM）／反铁磁层（FeMn）耦合体系中插入Pt插层或对靠近FM／FeMn界面处的FeMn掺杂Pt元素，研究了体系的交换偏置场日Bx及矫顽力日。随Pt插层深度dPt与Pt掺杂层厚度tPtFeMn的变化关系．实验结果表明，引入Pt插层后NiFe／FeMn（dPt）／Pt／FeMn体系的未补偿磁矩（UCS）的数量得到很大的提高，从而对Hex与Hc起到增强的作用；同时，从实验结果可以推测FeMn层内部UCS的分布深度约为1.3nm．另外，对靠近FM／FeMn界面处的FeMn掺杂Pt元素，发现掺入Pt元素后体系的Hex得到有效增强，这是因为掺入Pt元素后体系UCS的数量也得到很大的提高．
英文摘要：
By inserting a Pt spacer between ferromagnetic （FM）/antiferromagnetic （FeMn） coumpling systems or by doping Pt element in the AFM layer, the depth dependence of Pt spacer and the thickness dependence of Pt doping layer on exchange bias （Hex） and coercivity （He） are investigated. The results indicate that the number of uncompensated spin moments （UCSs） of NiFe/FeMn（dpt）/Pt/FeMn increases as a result of inserting Pt spacer, which enhances Hex and He of the system. Also, the distribution depth about 1.3 nm of UCS of FeMn in NiFe/FeMn system is inferred. Besides, by doping Pt element in FeMn near the FM/FeMn interlayer, we find that the Hex of the system is enhanced efficiently, which is caused by the huge increase of the number of UCSs in the system.
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