中文摘要：

由分子束外延生长的GaSb基的InAs/GaSb超晶格材料具有良好的均匀性,其在制作红外焦平面探测器方面有独特的优势。分别采用生长中断和表面迁移率增强的分子束外延法在GaSb衬底上生长了中波段InAs/GaSb超晶格红外探测器材料,对比表明对于中波超晶格材料,生长中断法优于表面迁移率增强法。利用标准工艺制作了中波红外PIN单元探测器,并制备了320×256的焦平面探测器芯片。

英文摘要：

The Ga Sb-based InAs/Ga Sb superlattices grown by molecular beam epitaxy（MBE） with high uniformity of materials has obvious advantages in the fabrication of infrared focal plane array（FPA）detectors. By the growth interrupt and the surface mobility enhancement methods of molecular beam epitaxial growth,mid-wavelength InAs/Ga Sb infrared superlattices material for detectors are grown on Ga Sb substrate respectively. The comparison shows that for mid-wavelength superlattices materials,the growth interrupt method is better than the surface mobility enhancement method. The PIN photodiodes is made,the focal plane array of 320 × 256 pixel is fabricated.