Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride substrate
- ISSN号:1674-4926
- 期刊名称:《半导体学报:英文版》
- 时间:0
- 分类:TN305.3[电子电信—物理电子学] TN403[电子电信—微电子学与固体电子学]
- 作者机构:[1]Department of Electronics Science and Technology, East China Normal University, Shanghai 200062, China, [2]Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- 相关基金:Supported by the Special Funds for Major State Basic Research Projects (No.G2000036506) and the National Natural Science Foundation of China (No. 60476006)