中文摘要：

基于三场的控制方程建立了电磁场、热场及结构场耦合分析的数学模型,推导出其等效积分＂弱＂解形式,研究了TSV（Through Silicon Via,硅通孔技术）电磁-热-结构的多物理场耦合效应,分析了高斯脉冲加载条件下TSV的温度和等效应力分布情况。仿真结果表明,在考虑三场耦合的情况下得到的结果更为准确,这将有助于TSV的设计及对其性能进行相应的预测。

英文摘要：

The mathematical model of coupling analysis on electromagnetic field, thermal field and structure field was established according to the control equation of three fields. And the equivalent integral form of ＂weak＂ solution was deduced. Then TSV physical field coupling effect was researched. The condition of temperature and equivalent stress distribution of TSV was analyzed under the Gaussian pulse load. The simulation results show, the results obtained in considering the three-field coupling situation are more accurate, which will be useful to the design of TSV and the corresponding projections for its performance.