位置：成果数据库 > 期刊 > 期刊详情页
Large-swing a-IGZO inverter with a depletion load induced by laser annealing
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Lett.
  • 时间：2014.8.15
  • 页码：1034-1036
  • 相关项目：基于III-V化合物半导体的太赫兹特异材料的设计与应用研究
作者： Chenfei Wu|Hai Lu|Fangfang Ren|Dunjun Chen|Yanli Liu|Guang Yu|Rong Zhang|Youdou Zheng|Yongjin Wang|
同期刊论文项目
基于III-V化合物半导体的太赫兹特异材料的设计与应用研究
期刊论文 23
同项目期刊论文
Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate
Spectrum broadening of high-efficiency second harmonic generation in cascaded photonic crystal micro
Metal-semiconductor-metal ultraviolet photodetectors directly fabricated on semi-insulating GaN:Fe t
Solar-blind ultraviolet band-pass filter based on metal–dielectric multilayer structures
High-Temperature Single Photon Detection Performance of 4H-SiC Avalanche Photodiodes
Second-order surface-plasmon assisted responsivity enhancement in germanium nano-photodetectors
Vacuum violet photo-response of AlGaN-based metal-semiconductor-metal photodetectors
Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium–gallium–zin
Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility trans
离子注入对ZnTe：O中间带光伏材料的微观结构及光学特性的影响
Solar-blind ultraviolet band-pass filter based on metal-dielectric multilayer structures
Breakdown characteristics of AIGaN/GaN Schottky barrier diodes fabricated on a silicon substrate