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Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility trans
  • ISSN号：0026-2714
  • 期刊名称：Microelectronics Reliability
  • 时间：2014.11
  • 页码：2406-2409
  • 相关项目：基于III-V化合物半导体的太赫兹特异材料的设计与应用研究
作者： Weizong Xu|Lihua Fu|Hai Lu|Dunjun Chen|Fangfang Ren|Rong Zhang|Youdou Zheng|Ke Wei|Xinyu Liu|
同期刊论文项目
基于III-V化合物半导体的太赫兹特异材料的设计与应用研究
期刊论文 23
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