中文摘要：

为了解决典型低压差线性稳压器（LDO）在全负载范围内的稳定性问题，采用了低阻抗设计的缓冲器来驱动调整管，即采用动态分流反馈偏置技术来降低缓冲器的输出电阻，以将调整管栅极处的极点推向更高的频率范围且不消耗大电流。完成了一款在全负载范围内有足够相位裕度的低功耗LDO的设计，并采用HHNEC0．18仙mCMOS工艺实现版图设计，芯片的尺寸为150μm×120μm，输出电压为1．8V，空载静态电流为5汕A，额定电流为20mA。与普通的LDO相比，本款LDO具有更高的相位裕度和更好的瞬态特性，在全负载范围内相位裕度的最小值大于65°，负载调整率小于2％。

英文摘要：

To improve the stability of the typical low-dropout regulator （LDO） under full range of current load, a LDO for portable applications with an impedance-attenuated buffer for driving the pass device was presented, and dynamically-biased shunt feedback was proposed to push the pole at the gate of the pass device to high frequencies without dissipating large current, By using above means, enough phase margin was achieved under the full rang of the load current. The LDO was designed and implemen- ted in HHNEC 0. 18 μm CMOS process. The active area is 150 μm×120μm, the output voltage is 1.8 V, the quiescent current at no-load is 5 μA, the full load current is 20 mA. Compared with a typical LDO, the LDO can achieve higher phase margin and better transient response under full range of the load current, the minimum of the phase margin is over 65°, the DC load regulation is below 2%.