中文摘要：

在不同基底温度下,用电子束蒸镀法在未抛光Mo、抛光Mo及Si〈111〉基片上制备了Sc膜,并用XRD、SEM及AFM对薄膜的微观结构和表面形貌进行了分析测试。结果表明：衬底材料、基底温度对Sc膜结构、形貌的影响极大。物相结构相同的Mo基底,抛光Mo上的Sc膜表面较平整,倾向于混合生长;而粗糙Mo基底上Sc膜凸凹不平,为岛状生长。提高基底温度有利于抛光Mo基底上Sc膜的（002）方向择优生长,但高温时会导致Si基底上膜表面的物相由单质Sc变为ScSi化合物,作为吸氢材料,ScSi化合物的形成不利于吸氢,应尽量避免其生成。

英文摘要：

Scandium films were grown on various substrates（Mo,polished Mo,Si〈111〉） by electron beam deposition at different substrate temperatures.The influence of substrate material and substrate temperature on the microstructure and morphology of Sc films was revealed by the XRD,SEM and AFM results.It is found that the surface of Sc film deposited on polished Mo substrate is rather smooth,and with Stranski-Krastanov growth mode.However,the surface becomes coarse and grows in a Volmer mode when deposited on the rolled Mo substrate.Increasing the substrate temperatures is beneficial to the growth of c-axis orientation of Sc films grown on polished Mo substrate.While,the phase structure of films on Si substrates changes from Sc to the ScSi compound with increasing temperature to 650 ℃,which is harmful to the property of hydrogen absorption.