中文摘要：

采用XRD，SEM，AFM等详细研究了氘化及氦离子注入对钪膜的表面形貌和相结构的影响．结果表明，在单晶硅及抛光Mo基片上制备的钪膜均具有（002）晶面择优取向；钪膜氘化后表面会出现大量孔洞，氘化后氘化钪（ScD2）晶粒长大，但内部会残留少量未完全氘化反应的晶粒尺寸较小的ScDo3z／Sc晶粒；氦离子注入对钪及氘化钪的表面形貌没有明显影响，离子注入的氦将在钪及氘化钪晶格中聚集成泡，导致氦离子注入层中的钪及氘化钪衍射峰向低角度偏移，并且氦泡的聚集具有择优取向性．

英文摘要：

The effects of deuteration and helium-implantation on the surface morphology and phase structure of scandium （Sc） thick film are investigated by X-ray diffraction （XRD）, Scanning Electron Microscopy （SEM） and Atomic Force Microscopy （AFM） methods. The preferred orientation of （002） crystal plane is observed for both films deposited on substrates of monocrystalline-silicon and polished- molybdenum. A great number of holes appear on surface after deuteration and the grain size of ScD2 is bigger than that of Sc, whereas a few ScDo.33/Sc grains with relatively small grain size retain inside crystal. The surface morphologies of scandium and scandium deuteride films are slightly affected by helium-implantation. The formation of helium bubbles with a preferred orientation in the crystal lattice of scandium and scandium deuteride, generated by the aggregation of ion-implanted helium, causes the corresponding diffraction peaks of scandium and scandium deuteride phase to shift towards smaller angles.