用反应磁控溅射法制备了Ta2O5和SiO2的单层膜和多层高反射薄膜,研究了在过渡区制备高质量光学薄膜的影响因素和机制,探讨了制备高质量光学薄膜的工艺,并引入了一种结合拟合方法的被动控制技术来实现在磁控溅射过渡区制备高质量的光学多层膜。结果表明,在反应磁控溅射过渡区制备的光学薄膜不仅具有比氧化区更高的沉积速率,而且具有更高的折射率和更低的光损耗。在过渡区镀制光学多层膜时速率的变化与溅射电压的漂移有关,并且可以通过监测溅射电压随时间的变化结合拟合算法加以修正。在表面均方根粗糙度为0.56nm的石英基片上,采用过渡区镀膜和膜厚修正制备了40层的Ta2O5和SiO2高反膜,通过光腔衰荡光谱方法测得的反射率达到99.96%。
Ta2O5 and SiO2 single-layer films and multilayer high reflectance films have been prepared by reactive magnetron sputtering. Influences of the process parameters on the quality of optieal films and the underlying mechanisms were studied. A passive control method based on fitting the optical spectra can effectively improve the quality of the multilayer films prepared in the transition region. Results indicate that in addition to the high deposition rate, films deposited in the transition region also have higher refractive index and lower optical losses, compared with those deposited in the oxide region. The changes of the deposition rates during the deposition process of a multilayer film in the transition region depend on the changes of the sputtering voltage, which can be compensated with the fitting method by monitoring the sputtering voltages. 40-layer Ta2O5/SiO2 high reflectance films were prepared in the transition region on fused silica substrate, which has a surface roughness of 0.56 nm. The reflectance of these mirrors reaches 99.96% as measured by cavity ring-down spectroscopy.