用溶剂热方法合T[Me4N]2HgGe4S10,通过单晶x射线衍射,IR,DSC—TG手段对其进行了表征.结果表明,标题化合物属四方晶系,I-4空间群,晶胞参数a=0.92687(8)nm,c=1.43739(12)nm,V=1.23484(18)nm^3,Z=2,Mo Kαλ=0.071073nm,R1=0.0570,wR2=0.1374,空旷骨架结构由超四面体Ge4S10与HgS4四面体共用顶点连接而成,有机模板离子在一维孔道中.该化合物具有一定的热稳定性,在320℃发生分解形成GeS2.
An open-framework [Me4N]2HgGe4S10 (1) was solvothermally synthesized and characterized by single crystal diffraction, IR and DSC-TG techniques. Compound 1 was built up from supertetrahedra Ge4S10^4- and HgS4, and has 1D channels with pore sizes of 0.94 nm×0.65 nm along direction a or b. TG-DSC results indicated that 1 has a good thermal stability in a nitrogen. Crystal data for 1: Mr=957.55, space group I-4, a=0.92687(8) nm, c= 1.43739(12) nm, V= 1.23484(18) nm^3, Z=2, Mo Kαλ 2=0.071073 nm, R1 =0.057, wR2=0.1374 for 906 reflections with 1〉2σ(I).