中文摘要：

摘要：采用纯铪（Hf）金属靶，在氧＋氩反应气氛中进行了HfO2薄膜直流反应磁控溅射沉积。首先在单晶硅片上沉积薄膜，研究工艺参数改变对薄膜的影响，然后选择较优的工艺在金刚石表面沉积符合光学厚度的薄膜，达到增透减反射效果。利用X射线光电子能谱（XPS）研究了O2／Ar比例对薄膜组成的影响。利用X射线衍射仪（GIXRD）和椭偏仪（EHipsometer）研究了不同衬底温度对氧化铪薄膜组织结构和光学性能的影响。采用傅立叶红外光谱仪（FTIR）检测了镀膜前后金刚石红外透过性能，发现双面镀制HfO2薄膜能够有效提高金刚石在8—12μm的红外透过性能，在8μm处最大增透可达21．6％，使金刚石红外透过率达到88％；在3～5μm范围，双面镀制了HfO2薄膜的金刚石平均透过率达66．8％，比没有镀膜的金刚石在该处的平均透过率54％高出12．8％。

英文摘要：

Hafnium dioxide （HfO2） thin films were prepared by direct current reactive magnetron sputtering with high purity Hf target in Ar/O2 mixtures. The effect of O2 working pressure on HfO2 film deposition was studied by XPS. The optical performance and the structure of the as-deposition HfO2 thin films at different deposition temperatures were characterized by EUipsometry and XRD. The IR transmittance of the freestanding diamond film sample was increased to 88% at the most after depositing HfO2 films in the 8-12μm IR wavelength range; whilst the average IR transmittance of the diamond film sample rose from 54% to 66.8% in the 3-5 μm mid-IR wavelength range.