中文摘要：

利用MOCVD方法，在GaAS衬底上生长了不同DBR结构的红光和黄绿光AlGaInP四元外延片，并通过芯片工艺制成芯片。使用X-射线衍射仪（HRXRD）、光致发光仪（PL）、芯片光电测试仪等表征了外延片和芯片的性能，研究了红光和黄绿光AlGaInP四元外延片的发光强度与DBR结构的关系。结果表明，红光AlGaInP LED芯片的发光强度高于黄绿光，其主要原因是黄绿光有源区的内量子效率低和黄绿光DBR具有较小的反射率，从而导致较低的发光强度。本研究为今后LED全结构的芯片亮度研究打下良好基础。

英文摘要：

Red and substrate by MOCVD. yellow-green AlGalnP wafers with different DBR were grown on the GaAs LED chips were made of wafers through the chip process. Wafers and chips were characterized by HRXRD, PL, and chip testing. The relationship between DBR and Luminous intensity of red and yellow-green AlGalnP chips was investigated. The results show that luminous intensity of red chips is higher than that of yellow-green chips, because of the lower internal quantum efficiency of yellow-green chips and lower reflectivity of DBR structure.