中文摘要：

研究了在湿法腐蚀Ga N衬底上生长的Zn O纳米棒阵列的微结构和光学性能。相比于未经腐蚀及腐蚀5 min、10 min的Ga N上生长的Zn O纳米棒阵列,在腐蚀8 min的Ga N上生长的Zn O纳米棒阵列最细密,光学性能最好,其相应PL光谱峰强积分比IUV/Ivis最大（70.92）。因为此时Ga N衬底中的位错基本全部在表面露头,Zn O容易附着而形成更多的形核种子,并且衬底的位错在表面的边缘有助于诱导Zn O晶体的外延生长,所以Zn O棒更加细密,晶体质量更高,从而光学性能更好。

英文摘要：

1-D Zn O nanorods arrays were fabricated on the wet etched Ga N substrates and the microstructure and optical properties were studied. Compared with Zn O nanorods grown on Ga N with no corrosion and corrosion for 5 min and 10 min,the nanorod arrays with the etching time of 8 min are the finest and have the best optical properties,besides its corresponding PL spectral peak integral ratio IUV/Ivisis the largest. Because the dislocations in the Ga N substrate with the etching time of 8min are almost entirely in the surface outcrops,and the Zn O nanorods grown on it are easy to attach to form more nucleated seeds,furthermore it is helpful to induce the helical growth of Zn O crystals when the dislocations of the substrate are at the edge of the surface. Therefore,the Zn O nanorods are more compact and uniform,and the crystal quality and optical properties are more ideal.