中文摘要：

具有无机-有机杂化钙钛矿结构的CH3NH3Pbl3通常偏向于显示n型半导体特性,本文以五氧化二钽（Ta2O5）作为绝缘层,制备了基于钙钛矿CH3NH3Pbl3单晶的顶栅结构场效应晶体管,暗态下更明显地观察到了CH3NH3Pbl3所具有的p型场效应特性,空穴场效应迁移率达到8.7× 10^-5cm^2·V^-1·s^-1,此暗态空穴迁移率比原有报道的基于CH3NH3Pbl3多晶薄膜的SiO2底栅场效应晶体管提高了一个数量级。此外,光照对CH3NH3Pbl3单晶场效应晶体管的性能有强烈影响。与底栅结构CH3NH3Pbl3多晶场效应晶体管不同,即使有栅极和绝缘层的遮挡,5.00 mW·cm^-2的光照仍可使CH3NH3Pbl3单晶场效应晶体管的空穴电流提高一个数量级（VGS（栅源电压）=VDS（漏源电压）=20V）,光响应度达到2.5 A·W^-1。本文工作实现了对CH3NH3Pbl3场效应晶体管载流子传输的选择性调控,表明在没有外部因素的参与下,通过合适的器件设计,CH3NH3Pbl3同样具有制备成双极性晶体管的潜力。

英文摘要：

Organic-inorganic hybrid perovskite methylammonium lead iodide （CH3NH3Pbl3） generally tends to show n-type semiconductor properties, in this work, a field-effect transistor （FET） device based on a CH3NH3Pbl3 single crystal with tantalum pentoxide （Ta2O5） as the top gate dielectric was fabricated. The p-type field-effect transport properties of the device were observed in the dark. The hole mobility of the device extracted from transfer charactedstics in the dark was 8.7 × 10^-5cm^2·V^-1·s^-1, which is one order of magnitude higher than that of polycrystalline FETs with SiO2 as the bottom gate dielectric. In addition, the effect of light illumination on the CH3NH3Pbl3 single-crystal FET was studied. Light illumination strongly influenced the field effect of the device because of the intense photoelectric response of the CH3NH3Pbl3 single crystal. Different from a CH3NH3Pbl3 polycrystalline FET with a bottom gate dielectric, even with the top gate dielectric shielding, light illumination of 5.00 mW·cm^-2 caused the hole current to increase by one order of magnitude compared with that in the dark （VGS （gate-source voltage） = VDS （drain-source voltage） = 20 V） and the photoresponsivity reached 2.5 A·W^-1. The introduction of Ta2O5 as the top gate dielectric selectively enhanced hole transport in the single-crystal FET, indicating that CH3NH3Pbl3 also has potential for use i n the absence of external factors, by appropriate device design n ambipolar transistors.