中文摘要：

采用磁控溅射方法制备Ni50.3，Mn27，Ga22.4磁性形状记忆合金薄膜。研究薄膜的晶体结构、磁化行为以及磁场对马氏体相变应变的影响。试验结果表明，经823K退火1h的Ni50.3，Mn27，Ga22．4薄膜，室温下处于奥氏体态，呈较强的（110）织构特性，且室温饱和磁化强度约为40emμ/g。试验还发现，当沿膜面方向施加0到0．8T磁场时，Ni50.3，Mn27，Ga22.4。薄膜的马氏体相变应变量随磁场强度的增大而增大，呈现出磁场增强马氏体相变应变效应。

英文摘要：

The Ni50.3 Mn27.3 Ga22.4 magnetic shape memory alloy thin film has been prepared by using magnetron sputtering method. The crystallographic structure, magnetization behavior and effect of the external magnetic field on martensitic transformation strain have been systematically investigated. The results show that the Ni50.3Mn27.3 Ga22.4 alloy thin film annealed at 823 K for 1 hour is at austenite phase state at room temperature, dis-playing a strong （ 101 ） texture. And the saturated magnetization of the thin film is approximately 40 emμ/g at room temperature. It is also found that martensitic transformation strain of the thin film under the application of the exter-nal magnetic field from 0 T and 0. 8 T along film plane increases with increasing magnetic field, showing magnetic field enhancement effect to martensitic transformation strain.