中文摘要：

采用磁控溅射方法制备Ni50.3Mn27.3Ga22.4磁性形状记忆合金薄膜。系统研究薄膜的马氏体相变行为、磁场增强相变应变特性以及温度对磁感生应变的影响。试验结果表明,经823 K退火1 h的Ni50.3Mn27.3Ga22.4薄膜室温下处于奥氏体态,马氏体相变开始温度为271.5 K。当沿膜面方向施加0—0.8 T磁场时,Ni50.3Mn27.3Ga22.4薄膜的马氏体相变应变量随磁场强度的增大而增大,呈现出磁场增强马氏体相变应变效应。试验还发现,饱和磁感生应变显著依赖于测试温度。当测试温度低于拟马氏体相变结束温度时,饱和磁感生应变随温度的升高先缓慢增大,在马氏体相变开始温度附近磁感生应变值发生跳跃式增加,然后随测试温度的进一步升高而降低。

英文摘要：

The Ni50.3Mn27.3Ga22.4 magnetic shape memory alloy thin film has been prepared by using magnetron sputtering method.The martensitic transformation behavior,magnetic-field enhancement strain and the effect of temperature on magneitc-field-induced strain have been systematically investigated.The results show that the Ni50.3Mn27.3Ga22.4 alloy thin film annealed at 823 K for 1 hour is at austenite phase state at room temperature,and the martensitic tansformation starting temperature is approximately 271.5 K.It is found that martensitic transformation strain increases with increasing external magnetic field along with the film plane when the field increases from 0 to 0.8 T,showing magnetic field enhancement effect to martensitic transformation strain.It is also found that the saturated magnetic-field-induced strains（MFIS） of Ni-Mn-Ga thin films remarkably depend on operation temperatures.The saturated MFIS of Ni50.3Mn27.3Ga22.4 thin films firstly increases and then decreases with increasing operation temperature below reverse martensitic transformation end temperature（Af） and the maximum saturated MFIS can be obtained around the martensitic transformation start temperature（Ms）.