采用温梯法工艺进行了掺铈和掺镱铝酸钇(YAlO3或YAP)晶体的生长实验。用同步辐射白光形貌表征了晶体内部生长层的分布情况,结果表明。温梯法生长掺杂YAP晶体的过程中,固-液界面形状比较平坦,这使得所生长的晶体具有较高的微观结构完整性;采用高分辨四晶摇摆曲线对其进行了表征,其主要晶面的半峰宽值均优于提拉法晶体。分析了生长过程中产生的主要缺陷,认为开裂主要来源于坩埚对晶体形成的压应力;而晶体中存在的色心主要与生长炉内的弱还原气氛有关。
The Ce and Yb-doped yttrium orthoaluminate crystals (Ce : YAlO3, Yb : YAlO3) were grown by temperature gradient technique (TGT). The growth striations shown by synchrotron radiation topography indicated that the solid-liquid interface in TGT-growth process was much flatter than that in CZ process. Such interface shape brought higher crystal perfection of TGT-grown crystals. This result was in agreement with that obtained by rocking curve measurement. The defects analysis indicated that the cracking was mainly due to the contraction stress imposed by crucible on crystal. The formation of color center in the doped YAP crystals was attributed to the weak reducing at- mosphere in the TGT furnace.