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中文摘要：
r面(0112)蓝宝石晶体可用作制备非极性GaN薄膜的衬底。采用温度梯度法(temperature gradient technique,TGT)和导模法(edge-defined film-fed crystal growth,EFG)生长了质量良好的r面蓝宝石晶体。利用双晶衍射、光学显微镜、光谱仪观察和分析了晶体的结构和缺陷。结果表明:TGT法生长的r蓝宝石晶体的双晶摇摆曲线对称性好,半高宽值仅为18 rad.s,位错密度为4×103 cm-2,透过率达83%,晶体质量好。与TGT法相比,EFG法生长的r面蓝宝石晶体的结构完整性较差,位错密度为5×105 cm-2,透过率仅为75%。但是EFG法具有晶体生长速度快,后期加工成本低的优点。
英文摘要：
(0112) r-plane sapphire is usually used as a substrate for growing nonpolar(1120) a-plane GaN film.r-plane sapphires with good quality were successfully grown by temperature gradient technique(TGT) and edge-defined film-fed crystal growth(EFG) methods.The properties of the sapphires were measured by double crystal diffractometry,optical microscopy and optical spectrometry.The results show that the sapphire grown by the TGT method has a dislocation density of 4×103 cm-2 and transmittance of 83%,and the full ...
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