中文摘要：

当高电子迁移率晶体管HEMT（highelectronmobilitytransistor）特征尺度与声子的平均自由程相当时，传统的宏观传热理论难以精确描述其内部传热的过程，本文基于微／纳尺度，建立了描述HEMT内部传热特征的格子Boltzmann模型，计算模拟其内部电子、声子碰撞、迁移过程，分析不同掺杂浓度对HEMT温度分布的影响。

英文摘要：

Traditional theory is difficult to describe the heat transfer mechanism ,When the characteristic dimensions of high electron mobility transistor is comparable with the mean free path of phonons. A lattice boltzmann method is proposed to study the collisions and transfer processes of phonons and electrons, purpose of our simulation was to determine if the doping concentration would be useful for the temoerature distributions of HEMT.