中文摘要：

采用射频磁控溅射制备Mn掺杂CuO薄膜样品。X射线衍射结果说明薄膜样品为单相结构且沿（111）取向生长。通过样品的XRD精修得到样品的结构和晶格参数，掺杂后薄膜晶体结构有微小畸变。薄膜的高分辨透射电镜研究证明了对结构和晶粒大小等的精修结果，且同时说明Mn以替代Cu的形式掺入了CuO晶格中。通过对样品M1T曲线的分析，得到样品的居里温度为96．5K，近邻Mn离子之间的耦合为铁磁性，并由居里外斯拟合得到Mn离子的有效磁矩为3．1μa。这说明磁性不是来自于团聚的Mn原子或铜锰的其它氧化物，而很可能来自于替位的锰离子所形成的Mn-O-Cu-O-Mn之间的铁磁性耦合。

英文摘要：

Highly （111） oriented Mn doped CuO thin film is fabricated on thermally-oxidized-silicon substrate by radio frequency magnetron sputtering. The X-ray diffraction refinement confirms that the structure of the film has slightly deviation to CuO＇s structure due to doped Mn atoms. The transmission electron microscopy and fourier transformation pattern analysis are consistent with the results of the X-ray diffraction refinement and shows that the doped Mn substitutes the Cu atom in CuO lattice. The ferromagnetism is observed for 15.2% Mn doped CuO thin film with a Curie temperature of 96.5K and educes that the exchange interaction between the near-neighboring Mn ions is ferromagnetic. The fitting according to Curie Weiss law gives an effective moment of 3.1μB per Mn ion. It suggests that the characteristic of ferromagnetic coupling mainly originates from Mn-O-Cu-O-Mn coupling rather than Mn aggregation or other oxides of manganese and cooper.