中文摘要：

采用水热法,在磁控溅射铺膜后的ITO-基底（MST-基底）上制备出取向一致的SnO2纳米线阵列.用X射线衍射（XRD）、扫描电子显微镜（SEM）、透射电子显微镜（TEM）和高分辨透射电子显微镜（HRTEM）等手段对制备的纳米线阵列进行了表征.考察了不同的基底铺膜方式和退火温度对产物形貌、尺寸和取向性的影响.结果表明,不同的基底铺膜方法对产物的形貌和尺寸有较大的影响：在磁控溅射法铺膜的基底上生长出SnO2纳米线阵列;在旋涂法铺膜的基底上生长出SnO2纳米棒阵列;在未铺膜基底上生长出SnO2纳米颗粒薄膜.另外,退火温度对生长在磁控溅射铺膜基底上的产物的取向性有较大的影响,随着退火温度的升高,产物的取向性增强.

英文摘要：

By using a hydrothermal method,well-aligned SnO2 nanowire arrays were prepared on ITO substrates,which were pretreated by a magnetron sputtering method（MST-substrates）.The samples were characterized by X-ray diffraction（XRD）,field-emission scanning electron microscopy（SEM）,transmission electron microscopy（TEM）and high-resolution transmission electron microscopy（HRTEM）.The effects of film-coated methods and annealing temperature on the morphology,size and orientation were studied.The results show that the pretreating methods for substrates have great influence on the morphology and size of the samples.The SnO2 nanowire,nanorod,nanoparticle arrays grow on different substrates,which were pretreated with magnetron sputtering,spin-casting methods and unmodified respectively.It is also found that annealing temperature for the pretreated substrates with magnetron sputtering plays a main role in controlling the orientation of SnO2 nanowire arrays.The orientation of SnO2 nanowire arrays is improved by increasing the annealing temperature.